Area-Selective Electroless Deposition of Cu for Hybrid Bonding
نویسندگان
چکیده
This paper describes the use of area-selective electroless Cu deposition for topography control Cu-SiCN hybrid bonding pads. The allows one to obtain protrusions on pads without further polishing optimization. A recessed pad after chemical mechanical becomes a protrusion deposition. indicates that film was selectively deposited Cu, SiCN surface. void-free Cu-Cu interface observed annealing at 350 °C with an layer interface. 100% electrical connection obtained 1.4-μm pitch where thickness target.
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2021
ISSN: ['1558-0563', '0741-3106']
DOI: https://doi.org/10.1109/led.2021.3124960